Optical and electrical properties of undoped microcrystalline silicon deposited by the VHF-GD with different dilutions of silane in hydrogen

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 761-766

  Beck, N ^a   Torres, P ^a   Fric, J ^a   Remes, Z ^a   Poruba, A ^a   Stuchlikova, Ha ^a   Fejfar, A ^a   Wyrsch, N ^a   Vanecek, M ^a   Kocka, J ^a   Shah, A ^a  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; HYDROGEN; LIGHT ABSORPTION; LIGHT SCATTERING; OPTICAL PROPERTIES; PHASE TRANSITIONS; SILANES;

DILUTIONS; DRIFT MOBILITIES; ELECTRON DEEP TRAPS; MICROCRYSTALLINE SILICON; TIME OF FLIGHT TECHNIQUE;

SILICON;

EID: 0030686932     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)