Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 251-256

  Ruvimov, S ^a   Liliental Weber, Z ^a   Washburn, J ^a   Drummond, T J ^a   Hafish, M ^a   Lee, S R ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL DEFECTS; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030685962     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)