Preparation of pit-free hydrogen-terminated Si(111) in deoxygenated ammonium fluoride

Materials Research Society Symposium - Proceedings

Volumn 477, Issue , 1997, Pages 299-304

  Wade, Christopher P ^a   Chidsey, Christopher E D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; CHEMICAL BONDS; COMPOSITION EFFECTS; ETCHING; OXIDATION; OXYGEN; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY;

AMMONIUM FLUORIDE; DEOXYGENATION; ETCH PIT DENSITY;

SEMICONDUCTING SILICON;

EID: 0030685312     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)