Scalability of plasma damage with gate oxide thickness

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1997, Pages 11-14

  Bayoumi, Amr ^a   Ma, Shawming ^a   Langley, Brian ^a   Cox, Mike ^a   Tavassoli, Malahat ^a   Diaz, Carlos ^a   Cao, Min ^a   Marcoux, Paul ^a   Ray, Gary ^a   Greene, Wayne ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONTACTS; GATES (TRANSISTOR); OXIDES; SEMICONDUCTOR DEVICE STRUCTURES;

GATE OXIDES; PLASMA DAMAGE;

MOSFET DEVICES;

EID: 0030685017     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)