Spatial correlation effects of charged impurities on electron mobility in δ-doped quantum barriers

Superlattices and Microstructures

Volumn 21, Issue 2, 1997, Pages 237-240

  Koenraad, P M ^b   Shi, J M ^a,b   Van De Stadt, A F W ^b   Smets, A ^b   Devreese, J T ^a,b   Wolter, J H ^b   Peeters, F M ^a   Perenboom, J A A J ^c  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

DX centers; Electron mobility; Low dimensions

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

ELECTRON MOBILITY; QUANTUM BARRIERS;

CRYSTAL MICROSTRUCTURE;

EID: 0030682925     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0188     Document Type: Article

References (9)

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