Defects in erbium/oxygen implanted silicon

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 249-254

  Duan, X ^a   Palm, J ^a   Zheng, B ^a   Morse, M ^a   Michel, J ^a   Kimerling, L C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ERBIUM; ION IMPLANTATION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON;

EID: 0030682042     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)