Breakdown of self-limiting behaviour in InAs/GaAs heterostructures grown by atomic layer epitaxy

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 574-578

  Ares R ^a   Watkins, S P ^a   Tran, C A ^a,b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ATOMIC LAYER EPITAXY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030681917     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00632-X     Document Type: Article

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