Technology and power-speed trade-offs in quantum-dot and nano-crystal memory devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 133-134

  Tiwari, Sandip ^a   Welser, J J ^a   Rana, F ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR STORAGE; TUNING;

FLASH ELEMENT MEMORY; GATE STRUCTURE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030681624     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.1997.623734     Document Type: Conference Paper

References (5)