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Volumn 21, Issue 4, 1997, Pages 527-532

Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets

Author keywords

Band offsets; Strained quantum wells; Ultrathin InAs layers

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; EXCITONS; INTERFACES (MATERIALS); OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0030680325     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0177     Document Type: Article
Times cited : (7)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.