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Volumn 21, Issue 4, 1997, Pages 527-532
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Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets
a a a a a |
Author keywords
Band offsets; Strained quantum wells; Ultrathin InAs layers
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Indexed keywords
BAND STRUCTURE;
ELECTRON TRANSITIONS;
EXCITONS;
INTERFACES (MATERIALS);
OPTICAL VARIABLES MEASUREMENT;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
BAND OFFSETS;
SPLITTING;
STRAINED QUANTUM WELLS;
ULTRATHIN FILMS;
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EID: 0030680325
PISSN: 07496036
EISSN: None
Source Type: Journal
DOI: 10.1006/spmi.1996.0177 Document Type: Article |
Times cited : (7)
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References (11)
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