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Volumn 451, Issue , 1997, Pages 245-249
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UHV model experiments of electrochemical etching of GaAs by H2O/Br2
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ADSORPTION;
ANNEALING;
BROMINE;
ETCHING;
EVAPORATION;
FERMI LEVEL;
LOW ENERGY ELECTRON DIFFRACTION;
MATHEMATICAL MODELS;
STOICHIOMETRY;
THERMAL EFFECTS;
WATER;
X RAY PHOTOELECTRON SPECTROSCOPY;
CORE LEVEL PHOTOELECTRON SPECTROSCOPY;
ULTRAHIGH VACUUM MODEL;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0030679393
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (15)
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