Characterization of p-type ZnSe grown by MOVPE; excitonic emission lifetime measurements

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 507-509

  Ogata, Ken Ichi ^a   Kera, Takashi ^a   Kawaguchi, Daisuke ^a   Fujita, Shizuo ^a   Fujita, Shigeo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

TIME-RESOLVED PHOTOLUMINESCENCE; ZINC SELENIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030678204     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00549-0     Document Type: Article

References (12)

1. A. Ishibashi, IEEE J. Sel. Top. Quantum Electron. 1 (1995) 741.
2. J. Qiu, J.M. DePuydt, H. Cheng and M.A. Hasse, Appl. Phys. Lett. 59 (1991) 2992.
3. I.S. Hauksson, J. Simpson, S.Y. Wang, K.A. Prior and B.C. Cavenett, Appl. Phys. Lett. 61 (1992) 2208.
4. R. Heitz, B. Lummer, V. Kutzer, D. Wiesmann, A. Hoffmann, I. Broser, E. Kurtz, S. Einfeldt, J. Nürnberger, B. Jobst, D. Hommel and G. Landwehr, Mater. Sci, Forum 182-184 (1995) 259.
5. K.A. Prior, Phys. Status Solidi (b) 187 (1995) 379.
6. T. Matsumoto, K. Egashira and T. Kato, J. Crystal Growth 159 (1996) 280.
7. J.A. Wolf, J.W. Ager III, J. Duxtad, E.E. Haller, N.R. Tasker, D.R. Dorman and D.J. Olego, Appl. Phys, Lett. 63 (1993) 2756.
8. A. Kamata, H. Mitsuhashi and H. Fujita, Appl. Phys. Lett. 63 (1993) 3553.
9. K. Ogata, D. Kawaguchi, T. Kera, Sz. Fujita and Sg. Fujita, J. Crystal Growth 159 (1996) 312.
10. I.S. Hauksson, J. Suda, Y. Kawakami, Sz. Fujita and Sg. Fujita, unpublished.
11. S. Nakamura, T. Mukai, M. Senoh and N. Iwasa, Jpn. J. Appl. Phys. 31 (1992) L139.
12. J.S. Massa, G.S. Buller, A.C. Walker, J. Simpson, K.A. Prior and B.C. Cavenett, Appl. Phys. Lett. 64 (1994) 589.