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Volumn , Issue , 1997, Pages 269-270
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Low threshold and low drive current 1.3 μm strained MQW-LDs fabricated by narrow-stripe selective MOVPE
a a a a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
METALLORGANIC VAPOR PHASE EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
NARROW STRIPE SELECTIVE METALLORGANIC VAPOR PHASE EPITAXY;
QUANTUM WELL LASERS;
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EID: 0030677995
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (5)
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