Emission efficiency in InAs LEDs controlled by surface recombination

Materials Research Society Symposium - Proceedings

Volumn 450, Issue , 1997, Pages 129-134

  Kane, M J ^a   Braithwaite, G ^a   Emeny, M T ^a   Lee, D ^a   Martin, T ^a   Wight, D R ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; LIGHT ABSORPTION; LIGHT EMISSION; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PHENOMENA;

AUGER RECOMBINATION RATE; SURFACE RECOMBINATION;

LIGHT EMITTING DIODES;

EID: 0030676960     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)