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Volumn 449, Issue , 1997, Pages 173-184
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Growth of cubic GaN by MBE and its properties
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
LIGHT EMITTING DIODES;
NITRIDES;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
GALLIUM NITRIDE;
METASTABLE CRYSTAL STRUCTURE;
MOLECULAR BEAM EPITAXY;
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EID: 0030676651
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (4)
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References (66)
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