Pulsed laser induced annealing and spin-on-doping in silicon wafers

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 1997, Pages 85-88

  Lo, V C ^a   Ho, S M ^a   Wong, Y W ^a   Chan, P W ^a   Cho, H C ^a   Tong, K Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CARRIER CONCENTRATION; ELECTRIC RESISTANCE; EXCIMER LASERS; HALL EFFECT; ION IMPLANTATION; PULSED LASER APPLICATIONS; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

PULSED LASER INDUCED ANNEALING;

SILICON WAFERS;

EID: 0030675588     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)