Comparative study of several anti-punchthrough designs for buried channel PMOSFET

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 18-19

  Son, Jeonghwan ^a   Lee, Seungho ^a   Huh, Kijae ^a   Yang, Wouns ^a   Lee, Youngjong ^a   Hwang, Jeongmo ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BURIED CHANNEL P METAL OXIDE SEMICONDUCTOR (BC PMOS); DOUBLE ARSENIC PUNCHTHROUGH STOPPER (DAPS); SHORT CHANNEL EFFECTS; SURFACE CHANNEL P METAL OXIDE SEMICONDUCTOR (SC PMOS);

MOSFET DEVICES;

EID: 0030675004     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)