Formation of buried porous silicon structure by hydrogen plasma immersion ion implantation

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 427-430

  Fan, Z ^a   Chu, Paul K ^a   Lu, X ^a   Iyer, S S K ^a   Cheung, N W ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ENERGY GAP; HYDROGEN; ION IMPLANTATION; LIGHT EMISSION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR PLASMAS; SILICON WAFERS;

BANDGAP; BURIED POROUS SILICON; PLASMA IMMERSION ION IMPLANTATION;

POROUS SILICON;

EID: 0030674890     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)