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Physica Status Solidi (A) Applied Research

Volumn 159, Issue 1, 1997, Pages 157-173

Electronic properties of hydrogen exposed III-V semiconductor surfaces

(1) Nannarone, S a,b

a UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

b INFM (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; ETCHING; HYDROGEN; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; STOICHIOMETRY; SURFACES; X RAY DIFFRACTION;

ATOMIC GEOMETRY; GRAZING INCIDENCE X RAY DIFFRACTION; METASTABLE ATOM SPECTROSCOPY; PHOTOELECTRON DIFFRACTION; SURFACE ETCHING; SURFACE RELAXATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030674102 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(199701)159:1<157::AID-PSSA157>3.0.CO;2-Q Document Type: Article

Times cited : (2)

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