Numerical investigation and model approximation for the hysteretic current-voltage characteristics of Josephson junctions with nonlinear quasiparticle resistance

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 110-113

  Mizugaki, Yoshinao ^a   Nakajima, Koji ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Gap voltage; I V characteristics; Josephson junctions; McCumber parameter; Nb AlOx Nb; Quasiparticle resistance; RCSJ model; Vm value

Indexed keywords

MCCUMBER PARAMETER; NONLINEAR QUASIPARTICLE RESISTANCE; SUPERCONDUCTOR INSULATOR SUPERCONDUCTOR (SIS) STRUCTURE;

APPROXIMATION THEORY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ENERGY GAP; LEAKAGE CURRENTS; MATHEMATICAL MODELS; NUMERICAL METHODS; SUPERCONDUCTING MATERIALS;

JOSEPHSON JUNCTION DEVICES;

EID: 0030673705     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.110     Document Type: Article

References (14)

1. H. Nakagawa, G. Pepe, H. Akoh, L. Frunzio, R. Cristiano, E. Esposito, S. Pagano, G. Peluso, A. Barone and S. Takada: Jpn. J. Appl. Phys. 32 (1993) 4535.
2. H. Sugiyama, A. Fujimaki and H. Hayakawa: IEEE Trans. Appl. Superconduct. 5 (1995) 2739.
3. R. E. Miller, W. H. Mallison, A. W. Kleinsasser, K. A. Delin and E. M. Macedo: Appl. Phys. Lett. 63 (1993) 1423.
4. A. W. Kleinsasser, R. E. Miller, W. H. Mallison and G. B. Arnold: Phys. Rev. Lett. 72 (1994) 1738.
5. W. C. Stewart: Appl. Phys. Lett. 12 (1968) 277.
6. D. E. McCumber: J. Appl. Phys. 39 (1968) 2503.
7. D. E. McCumber: J. Appl. Phys. 39 (1968) 3113.
8. P. K. Hansma and G. I. Rochlin: J. Appl. Phys. 43 (1972) 4721.
9. W. C. Scott: Appl. Phys. Lett. 17 (1970) 166.
10. H. Kratz and W. Jutzi: IEEE Trans. Magn. 23 (1987) 731.
11. B. D. Josephson: Adv. Phys. 14 (1965) 419.
12. E. S. Fang and T. Van Duzer: Ext. Abstr. 1989 Int. Superconductivity Electronics Conf. (Japan Society of Applied Physics, Tokyo, 1989) p. 407.
13. M. Maezawa, M. Aoyagi, H. Nakagawa, I. Kurosawa and S. Takada: Appl. Phys. Lett. 66 (1995) 2134.
14. We cannot directly simulate the dc I-V characteristics with JSIM, which allows only transient analysis. To obtain the dc I-V characteristics, we accumulate the phase difference in steady state for 10 ns and calculate the average voltage.