Highly manufacturable 1 Gb SDRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 9-10

  Kim, K N ^a   Lee, J Y ^a   Lee, K H ^a   Noh, B H ^a   Nam, S W ^a   Park, Y S ^a   Kim, Y H ^a   Kim, H S ^a   Kim, J S ^a   Park, J K ^a   Lee, K P ^a   Lee, K Y ^a   Moon, J T ^a   Choi, J S ^a   Park, J W ^a   Lee, J G ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; METALLIZING; SEMICONDUCTOR STORAGE; TITANIUM COMPOUNDS;

STATIC DYNAMIC RANDOM ACCESS MEMORY (SDRAM);

RANDOM ACCESS STORAGE;

EID: 0030673585     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.1997.623669     Document Type: Conference Paper

References (4)