Correlation of ordering formation and surface structure in (GaIn) P using modulated MOVPE

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 257-262

  Spika, Z ^a   Zimprich, C ^a   Stolz, W ^a   Gobel E O ^a,c   Jiang, J ^a   Schaper, A ^a   Werner, P ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030672918     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00639-2     Document Type: Article

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