Interaction of hydrogen and methane with InP(100) and GaAs(100) surfaces

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 1, 1997, Pages 185-194

  Stietz, F ^a   Woll, J ^b   Persch, V ^c   Allinger, Th ^b   Erfurth, W ^d   Goldmann, A ^b   Schaefer, J A ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF KASSEL   (Germany)

^c PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRON ENERGY LOSS SPECTROSCOPY; HYDROGEN; ION BOMBARDMENT; METHANE; MOLECULES; PHOSPHORUS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

DANGLING BOND; DESORPTION SPECTROSCOPY; ENERGY DISPERSIVE X RAY SPECTROSCOPY; HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY;

SURFACES;

EID: 0030672080     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199701)159:1<185::AID-PSSA185>3.0.CO;2-M     Document Type: Article

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