Phase evolution in boron nitride thin films prepared by a dc-gasdischarge assisted pulsed laser deposition

Thin Solid Films

Volumn 293, Issue 1-2, 1997, Pages 17-21

  Xin, Huoping ^a   Shi, Xiaohong ^b   Lin, Chenglu ^a   Xu, W Ping ^a   Zheng, Lirong ^a   Zou, Shichang ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Boron nitride; Dc gasdischarge; Fourier transform infrared spectroscopy; Laser ablation

Indexed keywords

CHEMICAL ACTIVATION; DEPOSITION; EXCIMER LASERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BEAMS; ION BOMBARDMENT; LASER ABLATION; PHASE TRANSITIONS; PULSED LASER APPLICATIONS; SILICON; STOICHIOMETRY; THIN FILMS;

GAS DISCHARGE ASSISTED PULSED LASER DEPOSITION (PLD);

CUBIC BORON NITRIDE;

EID: 0030671942     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08901-8     Document Type: Article

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