Correlations between the thermoelectric power and hall effect of Sn- or Ge-doped In2O3 polycrystalline ceramics

Active and Passive Electronic Components

Volumn 19, Issue 4, 1997, Pages 217-223

  Marcel, C ^a   Salardenne, J ^a   Huang, S Y ^b   Campet, G ^b   Portier, J ^b  

^a UNIVERSITÉ DE BORDEAUX   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMOELECTRICITY; TIN;

SCATTERING CROSS SECTION;

CERAMIC MATERIALS;

EID: 0030671678     PISSN: 08827516     EISSN: None     Source Type: Journal    
DOI: 10.1155/1997/89056     Document Type: Article

References (16)

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