MOVPE growth and characterization of AlxGa1-xN layers on sapphire

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 23-29

  Clur, S ^a   Briot, O ^a   Rouviere, J L ^a   Andenet, A ^a   Le Vaillant, Y M ^a   Gil, B ^a   Aulombard, R L ^a   Demangeot, J F ^a   Frandon, J ^a   Renucci, M ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

CONFINING LAYERS;

SEMICONDUCTOR GROWTH;

EID: 0030658740     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-23     Document Type: Conference Paper

References (14)