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Volumn , Issue , 1997, Pages 81-84
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Measurements and simulations of excess carrier distributions in 3.3 kV IGBTs during static conditions and turn-on
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CHARGE CARRIERS;
COMPUTER SIMULATION;
CURRENT DENSITY;
GATES (TRANSISTOR);
SEMICONDUCTOR DEVICE STRUCTURES;
EXCESS CARRIER DISTRIBUTIONS;
INSULATED GATE BIPOLAR TRANSISTORS (IGBT);
BIPOLAR TRANSISTORS;
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EID: 0030658445
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (7)
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