Performance comparison between new reduced surface drain `RSD' LDMOS and RESURF and conventional planar power devices rated at 20 V

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 185-188

  Efland, Taylor ^a   Tsai, Chin Yu ^a   Erdeljac, John ^a   Mitros, Jozef ^a   Hutter, Lou ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; STRESSES;

REDUCED SURFACE DRAIN (RSD) DEVICES;

MOS DEVICES;

EID: 0030658212     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)