Effects of passivation and post passivation anneal on the integrity of thin gate oxides

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1997, Pages 188-192

  Gelatos, Carol ^a   Tseng, Hsing Huang ^a   Filipiak, Stanley ^a   Sieloff, David ^a   Grant, Jack ^a   Tobin, Philip ^a   Cotton, Randy ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION COATINGS; ELECTRIC BREAKDOWN OF SOLIDS; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL CYCLING;

GATE OXIDES; POST PASSIVATION ANNEAL (PPA);

MOS DEVICES;

EID: 0030658188     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)