Quantum confinement effects on the thermoelectric figure of merit in Si/Si1-xGex system

Materials Research Society Symposium - Proceedings

Volumn 478, Issue , 1997, Pages 169-174

  Sun, X ^a   Dresselhaus, M S ^a   Wang, K L ^a   Tanner, M O ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; INTERFACES (MATERIALS); PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS; THERMOELECTRICITY;

CARRIER DENSITIES; SILICON GERMANIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030656629     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-478-169     Document Type: Conference Paper

References (10)