PE-CVD of F-doped SiO2 thin films using tetraisocyanatesilane and tetrafluorosilane

Materials Research Society Symposium - Proceedings

Volumn 443, Issue , 1997, Pages 137-142

  Shirafuji, T ^a   Sawada, M ^a   Nakagami, Y ^a   Hayashi, Y ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FIELDS; FLUORINE; INCLUSIONS; OXYGEN; PERMITTIVITY; PLASMA APPLICATIONS; SILANES; SILICA;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

DIELECTRIC FILMS;

EID: 0030655922     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)