0.25 μm CoSi2 salicide CMOS technology thermally stable up to 1,000 °C with high TDDB reliability

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 101-102

  Ohguro, T ^a   Nakamura, S ^a   Morifuji, E ^a   Yoshitomi, T ^a   Morimoto, T ^a   Harakawa, H ^a   Momose, H S ^a   Katsumata, Y ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT COMPOUNDS; DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); MOSFET DEVICES; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

NOISE FIGURE; SALICIDES;

CMOS INTEGRATED CIRCUITS;

EID: 0030655035     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)