Low-temperature infrared absorption measurement for oxygen concentration and precipitates in heavily-doped silicon wafers

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 31-36

  Koizuka, M ^a   Inaba, M ^a   Yamada Kaneta, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; HEAT TREATMENT; OXYGEN; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

GAS FUSION ANALYSIS; INFRARED ABSORPTION METHOD;

SILICON WAFERS;

EID: 0030654922     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)