Growth induced alignment of the first neighbor shell of CAs in AlxGa1-xAs

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 387-398

  Zheng, J F ^a   Stavola, Michael ^a   Abernathy, C R ^a   Pearton, S J ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; BAND STRUCTURE; CALCULATIONS; CARBON; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

ABSORPTION BAND; METALLORGANIC MOLECULAR BEAM EPITAXY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030654915     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (28)