Real-time monitoring of heteroepitaxial GaxIn1-xP growth on Si(001) by P-polarized reflectance

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 521-524

  Dietz, N ^a   Sukidi, N ^a   Harris, C ^a   Bachmann, K J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; HETEROJUNCTIONS; LIGHT SCATTERING; LOW TEMPERATURE OPERATIONS; MONOLAYERS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS; THIN FILMS;

OPTICAL MONITORING; PULSED CHEMICAL BEAM EPITAXY (PCBE);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030653821     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)