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Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 230-236

In situ surface passivation of III-V semiconductors in MOVPE by amorphous as and P layers

(6) Knorr, K a Pristovsek, M a Resch Esser, U a Esser, N a Zorn, M a Richter, W a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ARSENIC COMPOUNDS; DECOMPOSITION; PASSIVATION; PHOSPHORUS COMPOUNDS; PHOTOCHEMICAL REACTIONS; SEMICONDUCTOR GROWTH;

PHOTODECOMPOSITION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030653392 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00629-X Document Type: Article

Times cited : (26)

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