Growth of GaN thin films on sapphire substrate by low-pressure MOCVD

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 69-74

  Ishida, M ^a   Hashimoto, T ^a   Takayama, T ^a   Imafuji, O ^a   Yuri, M ^a   Yoshikawa, A ^a   Itoh, K ^a   Terakoshi, Y ^a   Sugino, T ^a   Shirafuji, J ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THIN FILMS;

BUFFER LAYER THICKNESS; NITRIDATION TIME;

SEMICONDUCTOR GROWTH;

EID: 0030653282     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-69     Document Type: Conference Paper

References (9)