Bound exciton energies, biaxial strains, defect microstructures in GaN/AlN/6H-SiC(0001) heterostructures

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 847-852

  Perry, W Q ^a   Zheleva, T ^a   Linthicum, K J ^a   Bremser, M D ^a   Davis, R F ^a   Shan, W ^a   Song, J J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; EXCITONS; LATTICE CONSTANTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; THERMAL EXPANSION;

BIAXIAL STRAIN; BOUND EXCITON ENERGY; LATTICE MISMATCH; NITRIDE SEMICONDUCTORS; RESIDUAL STRAIN;

HETEROJUNCTIONS;

EID: 0030651609     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)