Implantation activation annealing of Si-implanted gallium nitride at temperatures >1100°C

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 401-406

  Zolper, J C ^a   Han, J ^a   Biefeld, R M ^a   Van Deusen, S B ^a   Wampler, W R ^a   Pearton, S J ^a   Williams, J S ^a   Tan, H H ^a   Karlicek, R J ^a   Stall, R A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; HALL EFFECT; ION IMPLANTATION; NITRIDES; SEMICONDUCTOR DOPING;

DAMAGE PROFILE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030651575     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-401     Document Type: Conference Paper

References (16)