Fully planarized stacked capacitor cell with deep and high aspect ratio contact hole for giga-bit DRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 21-22

  Itabashi, K ^a   Tsuboi, S ^a   Nakamura, H ^a   Hashimoto, K ^a   Futoh, W ^a   Fukuda, K ^a   Hanyu, I ^a   Asai, S ^a   Chijimatsu, T ^a   Kawamura, E ^a   Yao, T ^a   Takagi, H ^a   Ohta, Y ^a   Karasawa, T ^a   Iio, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CAPACITORS; CELLULAR ARRAYS; MASKS; PHOTOLITHOGRAPHY; POINT CONTACTS;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); PHASE SHIFT MASK (PSM);

RANDOM ACCESS STORAGE;

EID: 0030648915     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)