Atomic hydrogen assisted growth of Si-Ge heterostructures on (001) Si

Materials Research Society Symposium - Proceedings

Volumn 448, Issue , 1997, Pages 113-118

  Baribeau, J M ^a   Lockwood, D J ^a   Rolfe, S J ^a   Syme, R W G ^a   Labbe, H J ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRACK INITIATION; HYDROGEN; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SURFACE ROUGHNESS;

ATOMIC HYDROGEN; SURFACE SEGREGATION;

HETEROJUNCTIONS;

EID: 0030648590     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)