Optical characteristics of GaAs 2D photonic bandgap crystal fabricated by selective MOVPE

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 11, Issue , 1997, Pages 528-529

  Hamano, T ^a   Hirayama, H ^a   Aoyagi, Y ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CRYSTALS; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

MICROPILLARS; PHOTONIC BANDGAP CRYSTALS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030648034     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)