Direct observation of mobile protons in SiO2 thin films: Potential application in a novel memory device

Materials Research Society Symposium - Proceedings

Volumn 446, Issue , 1997, Pages 187-192

  Vanheusden, K ^a   Warren, W L ^a   Devine, R A B ^a   Fleetwood, D M ^a   Schwank, J R ^a   Winokur, P S ^a   Lemnios, Z J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; ELECTRIC SPACE CHARGE; FIELD EFFECT TRANSISTORS; HYDROGEN; HYSTERESIS; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; PROTONS; SEMICONDUCTING SILICON; SILICA;

NONVOLATILE FIELD EFFECT TRANSISTOR MEMORY DEVICES; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

THIN FILMS;

EID: 0030647842     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)