The mechanism of dehydrogenation of SiNx:H films

Thin Solid Films

Volumn 293, Issue 1-2, 1997, Pages 6-10

  Smirnova, T P ^a   Yakovkina, L V ^a  

^a NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

Author keywords

Chemical vapour deposition (CVD); Infrared spectroscopy; Plasma processing and deposition; Silicon nitride

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DEHYDROGENATION; DISSOCIATION; FILM GROWTH; HYDROGEN BONDS; INFRARED SPECTROSCOPY; PLASMA APPLICATIONS; REACTION KINETICS;

DISSOCIATION ENERGY; HEXAMETHYLCYCLOTRISILAZANE; REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD);

SILICON NITRIDE;

EID: 0030647799     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09103-1     Document Type: Article

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