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Volumn 170, Issue 1-4, 1997, Pages 553-557

Structural study of (100) CdTe epilayers grown by MOVPE on ZnTe buffered and unbuffered (100) GaAs

(9) Mazzer, M a Longo, M b Leo, G a Lovergine, N b Mancini, A M b Drigo, A V c Romanato, F c Fregonara, C Zanotti d Salviati, G d

a Ist Stud Nuovi Materiali Per l'E (Italy)

b INFM (Italy)

c UNIVERSITY OF PADOVA (Italy)

d CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; EPITAXIAL GROWTH; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING TELLURIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH;

CADMIUM TELLURIDE; ION CHANNELING RUTHERFORD BACKSCATTERING SPECTROMETRY; ZINC TELLURIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030647561 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00601-X Document Type: Article

Times cited : (8)

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