Method for unified treatment of interface conditions suitable for device simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1997, Pages 173-176

  Simlinger, T ^a   Rottinger, M ^a   Selberherr, S ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CONVERGENCE OF NUMERICAL METHODS; ELECTRON TUNNELING; HETEROJUNCTIONS;

DIRICHLET BOUNDARY CONDITIONS; NEUMANN BOUNDARY CONDITION; THERMIONIC FIELD EMISSION MODEL;

SEMICONDUCTOR DEVICE MODELS;

EID: 0030647087     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)