Simplest stacked BST capacitor for the future DRAMs using a novel low temperature growth enhanced crystallization

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 153-154

  Takehiro, S ^a   Yamauchi, S ^a   Yoshimaru, M ^a   Onoda, H ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CRYSTALLIZATION; DIELECTRIC FILMS; ELECTRIC CHARGE; ELECTRIC CONTACTS; FILM GROWTH; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; SPUTTERING; THIN FILMS;

REACTIVE SPUTTERING; STACKED CAPACITORS;

CAPACITORS;

EID: 0030646930     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.1997.623744     Document Type: Conference Paper

References (3)