Light emission from intrinsic and doped silicon-rich silicon oxide: from the visible to 1.6 μm

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 523-528

  Tsybeskov, L ^a   Moore, K L ^a   Fauchet, P M ^a   Hall, D G ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; CURRENT DENSITY; ELECTROLUMINESCENCE; IMPURITIES; LIGHT EMISSION; LIGHT EMITTING DIODES; OXIDATION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SILICA; SILICON WAFERS;

ANODIC ETCHING; CHALCOGENS; RARE EARTH IONS; SILICON RICH SILICON OXIDE FILMS; THERMAL OXIDATION;

SEMICONDUCTING FILMS;

EID: 0030646513     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)