Influence of water absorption of dielectric underlayers on Al(111) crystallographic orientation in Al-Si-Cu/Ti/TiN/Ti layered structures

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 226-233

  Yoshida, Tomoyuki ^a   Hashimoto, Shoji ^a   Hosokawa, Hideki ^a   Ohwaki, Takeshi ^a   Mitsushima, Yasuichi ^a   Taga, Yasunori ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DIELECTRIC PROPERTIES OF SOLIDS; ELECTROMIGRATION; INTERCONNECTION NETWORKS; SEMICONDUCTING ALUMINUM COMPOUNDS;

DIELECTRIC UNDERLAYERS; FULL WIDTH AT HALF MAXIMUM (FWHM) VALUES;

VLSI CIRCUITS;

EID: 0030646479     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)