Bulk and surface electronic structure of GaN measured using angle-resolved photoemission, soft x-ray emission and soft x-ray absorption

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 787-792

  Smith, K E ^a   Dhesi, S S ^a   Duda, L C ^a   Stagarescu, C B ^a   Guo, J H ^a   Nordgren, J ^a   Singh, R ^a   Moustakas, T D ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; PHOTOEMISSION; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY SPECTROSCOPY;

ANGLE RESOLVED PHOTOEMISSION; CONDUCTION BAND; SOFT X RAY ABSORPTION SPECTROSCOPY; VALENCE BAND; X RAY EMISSION SPECTROSCOPY;

THIN FILMS;

EID: 0030644537     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)