MBE growth of InSb based device structures onto InSb(111)A, (111)B and InGaSb(111)A substrates

Materials Research Society Symposium - Proceedings

Volumn 450, Issue , 1997, Pages 103-108

  Johnson, A D ^a   Jefferies, R ^a   Pryce, G J ^a   Beswick, J A ^a   Ashley, T ^a   Newey, J ^a   Elliot, C T ^a   Martin, T ^a  

^a DRA   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

LATTICE MATCHING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030644002     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)